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Interview Question · Design

The Cascode and Its Price

L1 JuniorL2 Mid-Levelamplifiercascode

The Question

The interviewer asks

Your gain stage needs far more output resistance. You consider a cascode. What does it buy, and what does it cost?

Reveal the Model Answer

A common-gate device on top holds the lower drain nearly still. The output resistance becomes about (g_m2 + g_mb2)·r_o2·r_o1, so the top device's intrinsic gain multiplies r_o1. In the lesson that was 71 times one device at the same output voltage. The price is headroom. The output must stay above the lower drain plus the top device's V_Dsat. On a 1.8 V supply, that is the real limit.

A Cascode Current SinkM1 sets the current from its gate voltage. M2, gate at VB, sits on M1's drain and passes the current up to the output.
A cascode current sink++outM2W/L = 4/0.5M1W/L = 4/0.5VB1.2 VVIN0.75 Vout1.200 Vx0.380 V
  1. One current through the stack

    M1 sets 18.36 µA from its 0.75 V gate. M2 has no other path, so the same current flows through it and out of the output.

    18.36 µA

  2. M2 holds node x

    M2's gate is fixed at 1.2 V, and at a fixed current its VGS barely changes. So its source, node x, stays near 1.2 − 0.82 = 0.38 V.

  3. The output moves; x does not

    Raise the output from 0.6 V to 1.2 V and node x moves only 6.8 mV, from 0.373 V to 0.380 V. M1 sees almost the same VDS, so its current hardly changes.

Read the circuit as text
  • out port: terminal → out
  • M2 NMOS transistor (W/L = 4/0.5): gate → n1, drain → out, source → x
  • M1 NMOS transistor (W/L = 4/0.5): gate → n2, drain → x, source → 0
  • VB voltage source (1.2 V): + → n1, − → 0
  • VIN voltage source (0.75 V): + → n2, − → 0
  • out = 1.200 V
  • x = 0.380 V

Both bodies are at ground (the fourth node, 0). In the lab the output is held by VOUT and swept.

DC sweepOutput Resistance Against Output VoltageRout = 1/(dI/dV) along the sweep, for one device and three cascode biases.
  • one device
  • V_B = 0.9 V
  • V_B = 1.2 V
  • V_B = 1.5 V
1 kΩ10 kΩ100 kΩ1 MΩ10 MΩ100 MΩOutput resistance00.2 V0.4 V0.6 V0.8 V1.0 V1.2 V1.4 V1.6 V1.8 VOutput voltage10 MΩ1 kΩ10 kΩ100 kΩ1 MΩ10 MΩ100 MΩOutput resistance00.5 V1.0 V1.5 VOutput voltage10 MΩ
  1. Output voltage 400 mVone device = 293.4 kΩ · V_B = 0.9 V = 1.713 MΩ · V_B = 1.2 V = 427.7 kΩ · V_B = 1.5 V = 295.5 kΩ

    At 0.4 V, M2 of the 1.2 V cascode is not yet saturated, and its Rout is still close to one device's.

  2. Output voltage 610.3 mVone device = 415.1 kΩ · V_B = 0.9 V = 3.598 MΩ · V_B = 1.2 V = 10 MΩ · V_B = 1.5 V = 561.2 kΩ

    The VB = 1.2 V cascode passes 10 MΩ at 0.610 V, about 0.1 V above Vx + VDsat2.

  3. Output voltage 1.2 Vone device = 572 kΩ · V_B = 0.9 V = 6.338 MΩ · V_B = 1.2 V = 40.76 MΩ · V_B = 1.5 V = 47.44 MΩ

    At 1.2 V: 0.57 MΩ for one device, 6.3 MΩ at VB = 0.9 V, 40.8 MΩ at 1.2 V and 47.4 MΩ at 1.5 V.

Read the plot as a table
Output voltageone deviceV_B = 0.9 VV_B = 1.2 VV_B = 1.5 V
0 V4.257 kΩ6.11 kΩ5.152 kΩ4.884 kΩ
200 mV96.53 kΩ65.35 kΩ75.91 kΩ82.97 kΩ
400 mV293.4 kΩ1.713 MΩ427.7 kΩ295.5 kΩ
600 mV410.5 kΩ3.524 MΩ9.075 MΩ536 kΩ
610.3 mV415.1 kΩ3.598 MΩ10 MΩ561.2 kΩ
800 mV485.1 kΩ4.747 MΩ24.29 MΩ6.528 MΩ
1 V536 kΩ5.642 MΩ34.07 MΩ31 MΩ
1.2 V572 kΩ6.338 MΩ40.76 MΩ47.44 MΩ
1.4 V597 kΩ6.86 MΩ45.56 MΩ58.36 MΩ
1.6 V609.9 kΩ7.023 MΩ47.68 MΩ66.08 MΩ
1.8 V605.4 kΩ6.412 MΩ40.83 MΩ70.13 MΩ

Measured output resistance. Once the top device saturates, the cascode is about 71 times one device at 1.2 V.

Self-Check

Tick each key point you covered in your answer.

What Interviewers Listen For (Junior)

A good junior answer states how much the cascode raises the output resistance. It also names the price: one more V_Dsat of headroom.

Cross-Questions

Where the interviewer goes next. Open a node to practise that follow-up.

WhyWhat IfProve ItCompareScale It

  1. The Cascode and Its Price
  2. WhyWhy the Cascode Multiplies r_oL1 JuniorL2 Mid-Level

    Explain in words why a cascode's output resistance is about g_m·r_o times larger than one device's.

    Reveal the Model Answer

    Push the output up by a volt. The top device's r_o lets a little extra current flow, which raises the voltage at the lower drain, its source. That rise turns the top device down by g_m times the rise, cancelling most of the extra current. The output must move about g_m·r_o times further for the same current change.

    DC sweepOutput Current Against Output VoltageOne NMOS and the cascode, both with the input gate at 0.75 V. A flat curve means a high output resistance.
    • one device
    • cascode, V_B = 1.2 V
    -5 µA05 µA10 µA15 µA20 µA25 µACurrent00.2 V0.4 V0.6 V0.8 V1.0 V1.2 V1.4 V1.6 V1.8 VOutput voltage20.19 µA, slope 1/0.572 MΩ18.36 µA, slope 1/40.8 MΩ-5 µA05 µA10 µA15 µA20 µA25 µACurrent00.5 V1.0 V1.5 VOutput voltage20.19 µA, slope 1/0.572 MΩ18.36 µA, slope 1/40.8 MΩ
    1. Output voltage 300 mVone device = 18.03 µA · cascode, V_B = 1.2 V = 17.82 µA

      At low voltage both sinks are still rising. The single device is already saturated; the cascode is not.

    2. Output voltage 1.2 Vone device = 20.19 µA · cascode, V_B = 1.2 V = 18.36 µA

      At 1.2 V the single device's current still climbs with the output: 0.572 MΩ. The cascode's line is almost flat: 40.8 MΩ.

    Read the plot as a table
    Output voltageone devicecascode, V_B = 1.2 V
    0 V0 A0.000003521 fA
    200 mV17.35 µA17.04 µA
    300 mV18.03 µA17.82 µA
    400 mV18.43 µA18.17 µA
    600 mV19 µA18.33 µA
    800 mV19.44 µA18.35 µA
    1 V19.83 µA18.35 µA
    1.2 V20.19 µA18.36 µA
    1.4 V20.53 µA18.36 µA
    1.6 V20.87 µA18.37 µA
    1.8 V21.19 µA18.37 µA

    The same sinks as current against output voltage. The cascode line is almost flat: a high output resistance.

    Self-Check

    Tick each key point you covered in your answer.

  3. Prove ItSolve E3.7.1: The Smallest Cascode SinkSimulator-graded

    Show it, don't just say it: this Silicon Lab problem is graded by the simulator.

    Open Problem E3.7.1

  4. CompareSimple Mirror vs Cascode MirrorL1 JuniorL2 Mid-Level

    Compare a simple mirror with a cascode mirror.

    Reveal the Model Answer

    A cascode device on top raises the output resistance by about (g_m + g_mb)·r_o. In the lesson it went from 0.80 MΩ to 102 MΩ. The price is headroom: the output now needs about V_GS + V_Dsat, around 0.85 V. A wide-swing version gets most of the gain back while the output can fall to about 0.3 V.

    Self-Check

    Tick each key point you covered in your answer.

  5. Scale ItDesigning a Wide-Swing Cascode MirrorL2 Mid-LevelL3 Senior

    A differential pair's tail must stay accurate down to a low output voltage. You choose a wide-swing cascode mirror. How do you size its bias, and how do you check it?

    Reveal the Model Answer

    A separate diode device biases the cascode gates. It is sized so the bottom devices sit just above V_Dsat. The textbook W/4 rule comes from the square law, and in sky130 it left the copy 12 % low. A cascode on the reference side makes both bottom devices see the same V_DS and fixes the copy. Then sweep the output to find where the current is 1 % low, at every corner.

    A Wide-Swing Mirror with a Reference-Side CascodeXB sets the bias line b. R2 and O2 are cascodes on it; R1 and O1 share the gate node g, the top of the reference branch.
    A wide-swing mirror with a reference-side cascodeVDDIB20 µAXB1/1VDDIREF20 µAR28/1R18/1O28/1O18/1outb1.014 Vg0.718 Vy0.245 Vx0.246 V
    1. The bias device sets b

      XB is an eighth of the 8 µm width. At 20 µA it needs a larger VGS, so the bias line b sits at 1.014 V.

      20 µA

    2. The cascodes hold y and x low

      R2 and O2 have their gates on b, so their sources sit one VGS lower: y = 0.245 V and x = 0.246 V. Both bottom devices get about 0.25 V, above their 0.137 V VDsat.

    3. The bottom devices match

      R1's gate is tied to g, the top of the reference branch, so g settles where R1 carries 20 µA at y. O1 shares g and sits at nearly the same VDS: it copies 20.006 µA at 0.9 V.

      20.006 µA

    4. Room at the output

      O2 needs only its own VDsat above x, so the output can fall to 0.297 V before the current is 1 % low.

    Read the circuit as text
    • IB current source (20 µA): + → VDD, − → b
    • XB NMOS transistor (1/1): gate → b, drain → b, source → 0
    • IREF current source (20 µA): + → VDD, − → g
    • R2 NMOS transistor (8/1): gate → b, drain → g, source → y
    • R1 NMOS transistor (8/1): gate → g, drain → y, source → 0
    • O2 NMOS transistor (8/1): gate → b, drain → n1, source → x
    • O1 NMOS transistor (8/1): gate → g, drain → x, source → 0
    • out port: terminal → n1
    • b = 1.014 V
    • g = 0.718 V
    • y = 0.245 V
    • x = 0.246 V

    Node voltages at Vout = 0.9 V from the lab's mirror m8. Widths in µm, all L = 1 µm; all bodies are the substrate at ground.

    DC sweepFour 20 µA Mirrors Against Output VoltageSimple (i_s), stacked cascode (i_c), wide-swing by the W/4 rule (i_w4), and wide-swing with a reference-side cascode and a W/8 bias device (i_m8).
    • i_s
    • i_c
    • i_w4
    • i_m8
    05 µA10 µA15 µA20 µA25 µAOutput current00.2 V0.4 V0.6 V0.8 V1.0 V1.2 V1.4 V1.6 V1.8 VOutput voltage VO20 µAsimple 0.757 Vstacked 0.621 VW/4 0.301 Vmatched W/8 0.297 V05 µA10 µA15 µA20 µA25 µAOutput current00.5 V1.0 V1.5 VOutput voltage VO20 µAsimple 0.757 Vstacked 0.621 VW/4 0.301 Vmatched W/8 0.297 V
    1. Output voltage VO 300 mVi_s = 19.16 µA · i_c = 19.11 µA · i_w4 = 17.37 µA · i_m8 = 19.81 µA

      At 0.3 V the matched W/8 mirror already gives 19.81 µA. The simple and the stacked mirrors give about 19.1 µA, the W/4 mirror 17.4 µA.

    2. Output voltage VO 900 mVi_s = 20.27 µA · i_c = 19.99 µA · i_w4 = 17.55 µA · i_m8 = 20.01 µA

      At 0.9 V: simple 20.27 µA, stacked 19.99 µA, W/4 17.55 µA, matched W/8 20.006 µA.

    3. Output voltage VO 1.7 Vi_s = 21.26 µA · i_c = 20 µA · i_w4 = 17.64 µA · i_m8 = 20.02 µA

      At 1.7 V the simple mirror has climbed to 21.26 µA; the cascodes have hardly moved.

    Read the plot as a table
    Output voltage VOi_si_ci_w4i_m8
    0 V0 A0 A0 A0 A
    200 mV18.64 µA18.51 µA16.67 µA19 µA
    300 mV19.16 µA19.11 µA17.37 µA19.81 µA
    400 mV19.44 µA19.39 µA17.45 µA19.97 µA
    600 mV19.82 µA19.76 µA17.5 µA20 µA
    800 mV20.13 µA19.97 µA17.53 µA20 µA
    900 mV20.27 µA19.99 µA17.55 µA20.01 µA
    1 V20.4 µA19.99 µA17.56 µA20.01 µA
    1.2 V20.66 µA20 µA17.58 µA20.01 µA
    1.4 V20.9 µA20 µA17.61 µA20.02 µA
    1.6 V21.14 µA20 µA17.63 µA20.02 µA
    1.7 V21.26 µA20 µA17.64 µA20.02 µA
    1.8 V21.38 µA20 µA17.65 µA20.03 µA

    Four 20 µA mirrors swept. The W/4 mirror is flat but 12 % low; the matched W/8 mirror is right and works down to about 0.3 V.

    Self-Check

    Tick each key point you covered in your answer.

    What Interviewers Listen For (Mid-Level)

    A good mid-level answer explains how the extra diode device sets the cascode bias. It checks the copy and the lowest output voltage by sweeping the output.

    Half-Truth

    "Use the W/4 rule for the bias device and you are done."

    The rule comes from the square law. In sky130 it left the copy 12 % low. Find the bias width by sweeping, not from the ratio.

    Source ASIC Point lesson E4.3 (measured)

    Buzzword Without Mechanism

    "The minimum output voltage is two V_Dsat."

    That is a hand estimate. The lesson defines it as the voltage where the current falls 1 % below its value at 0.9 V, and measures it.

    Source ASIC Point lessons E4.1 and E4.3

  6. WhyWhy a Reference-Side Cascode Fixes the CopyL2 Mid-Level

    Why does adding a cascode on the reference side make the wide-swing copy accurate?

    Reveal the Model Answer

    In the plain wide-swing mirror the reference device is diode-connected, so its V_DS is V_GS. The output's bottom device sits near V_Dsat instead. Different V_DS means a different current. A cascode on the reference side holds its bottom device at the same low V_DS as the output side. Then both carry the same current.

    DC sweepA Wide-Swing Mirror Sized by the W/4 RuleOutput current against output voltage. Every device is W/L = 8/1 µm except the 2/1 µm bias device.
    05 µA10 µA15 µA20 µA25 µAOutput current00.2 V0.4 V0.6 V0.8 V1.0 V1.2 V1.4 V1.6 V1.8 VOutput voltage VOreference 20 µA17.55 µA at 0.9 V05 µA10 µA15 µA20 µA25 µAOutput current00.5 V1.0 V1.5 VOutput voltage VOreference 20 µA17.55 µA at 0.9 V
    1. Output voltage VO 900 mVi_w4 = 17.55 µA

      At 0.9 V the copy is 17.55 µA: a flat curve, at the wrong current.

    2. Output voltage VO 1.7 Vi_w4 = 17.64 µA

      At 1.7 V it is still only 17.64 µA. A high output resistance holds an error as faithfully as a correct current.

    Read the plot as a table
    Output voltage VOi_w4
    0 V0 A
    200 mV16.67 µA
    400 mV17.45 µA
    600 mV17.5 µA
    800 mV17.53 µA
    900 mV17.55 µA
    1 V17.56 µA
    1.2 V17.58 µA
    1.4 V17.61 µA
    1.6 V17.63 µA
    1.7 V17.64 µA
    1.8 V17.65 µA

    The wide-swing mirror without a reference-side cascode: a flat curve at the wrong current, 17.55 µA instead of 20 µA.

    Self-Check

    Tick each key point you covered in your answer.

  7. Prove ItSolve E4.3.1: The Leanest Wide-Swing SinkSimulator-graded

    Show it, don't just say it: this Silicon Lab problem is graded by the simulator.

    Open Problem E4.3.1

  8. What IfSizing the Wide-Swing Bias by the Square LawL2 Mid-LevelL3 Senior

    What if you size the cascode bias device by the square-law W/4 rule instead of sweeping? What happens in sky130?

    Reveal the Model Answer

    In the lesson the W/4 rule left the copy 12 % low. Short sky130 devices do not follow the square law, so the bottom devices end up at the wrong V_DS. The bias width trades output resistance against the lowest output voltage. So find it by sweeping, and check the copy at the target output range.

    Self-Check

    Tick each key point you covered in your answer.

    Misconception

    "W/4 is exact; the textbook derives it."

    The derivation assumes the square law. Short devices break that model, so the derived width puts the bottom devices at the wrong voltage.

    Source Lesson E4.3 key points

  9. CompareSimple Mirror vs Cascode MirrorL1 JuniorL2 Mid-Level

    Compare a simple mirror with a cascode mirror.

    Reveal the Model Answer

    A cascode device on top raises the output resistance by about (g_m + g_mb)·r_o. In the lesson it went from 0.80 MΩ to 102 MΩ. The price is headroom: the output now needs about V_GS + V_Dsat, around 0.85 V. A wide-swing version gets most of the gain back while the output can fall to about 0.3 V.

    Self-Check

    Tick each key point you covered in your answer.

  10. Scale ItWriting a Bias Block SpecificationL3 Senior

    You must hand over a bias block to other designers. How do you write its specification and prove it?

    Reveal the Model Answer

    Write each requirement as one line with a limit and a measurement, set after measuring a reference design at every corner. Use one bench per check. Run a supply sweep and a temperature and supply sweep for the worst case. Add an output sweep for compliance and power-up transients, fast and slow. A constant-g_m reference moves its current on purpose, so specify the tail current as a band.

    The Bias Block, Piece by PieceArrows show where a current or a gate voltage goes. W/L in µm.
    The bias block, piece by pieceArrows show where a current or a gate voltage goes. W/L in µm. component Start-up XS1-XS3: kick atpower-up, then off component Reference Beta multiplier, K = 4,RS a res_high_po: 10µA component PMOS copies XP3 4/1: 10 µA; XP41/1: 2.5 µA component Cascode bias XBC 0.5/1.5 diodesets node c component Reference stack XC1 over XB1, 16/1units: node g output Tail output XC2 over XB2, twounits: 20 µA output PMOS bias output XB3 sinks 10 µA fromXPB 8/1 kickgate b2.5 µA10 µAgate cgate ggate g
    1. Reference and start-up

      The beta multiplier of E4.4 sets 10 µA with a res_high_po resistor (W = 0.35 µm, L = 8.54 µm). The start-up of E4.5 kicks it on at power-up and then switches off.

    2. Send currents

      PMOS devices on the reference's gate line b copy its current: 10 µA for the NMOS reference stack and 2.5 µA for the cascode bias. Currents travel; gate voltages stay local (E4.2).

    3. Wide-swing cascode

      The 2.5 µA diode XBC sets the cascode gate c. The reference stack sets the bottom gate g with its own cascode, so both bottom devices see the same drain voltage (E4.3). The tail is two units of the stack: 20 µA.

    4. PMOS bias output

      One more unit on gate g sinks 10 µA from a diode-connected 8/1 PMOS. Its gate is pbias: any 8/1 PMOS with its source at VDD and this gate voltage sources about 10 µA.

    Read the diagram as text
    • Start-up: XS1-XS3: kick at power-up, then off
    • Reference: Beta multiplier, K = 4, RS a res_high_po: 10 µA
    • PMOS copies: XP3 4/1: 10 µA; XP4 1/1: 2.5 µA
    • Cascode bias: XBC 0.5/1.5 diode sets node c
    • Reference stack: XC1 over XB1, 16/1 units: node g
    • Tail output: XC2 over XB2, two units: 20 µA
    • PMOS bias output: XB3 sinks 10 µA from XPB 8/1
    • Start-up → Reference: kick
    • Reference → PMOS copies: gate b
    • PMOS copies → Cascode bias: 2.5 µA
    • PMOS copies → Reference stack: 10 µA
    • Cascode bias → Tail output: gate c
    • Reference stack → Tail output: gate g
    • Reference stack → PMOS bias output: gate g

    The full netlist is the Try it below. Units are whole devices (m=2 for the tail), so the 2:1 ratio does not depend on drawn widths matching.

    Self-Check

    Tick each key point you covered in your answer.

What People Get Wrong

Common wrong answers and why they fail.

Half-Truth

"Cascode everything for gain; it is free."

Each cascode costs about one V_Dsat plus a margin of swing. On a 1.8 V supply a cascoded output and a cascoded load leave little room for the signal.

Source ASIC Point lesson E3.7

Missed Corner

"Bias the cascode gate anywhere above the input."

Too low and the lower device leaves saturation; too high and the swing shrinks. The bias must be about V_GS2 plus V_Dsat1, with a margin, and checked across corners.

Source ASIC Point lesson E3.7

Learn It, Then Prove It